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دسته بندی:
برق الکترونیک - Power Electronics
سال انتشار:
2021
عنوان انگلیسی مقاله:
Evaluation of the average grain size of polycrystalline graphene using an electrical characterization method
ترجمه فارسی عنوان مقاله:
ارزیابی اندازه دانه متوسط گرافن پلی کریستالی با استفاده از روش مشخصه الکتریکی
منبع:
ScienceDirect- Elsevier- Solid State Electronics, 186 (2021) 108172: doi:10:1016/j:sse:2021:108172
نویسنده:
Honghwi Park
چکیده انگلیسی:
Graphene grown by chemical vapor deposition (CVD) is intrinsically polycrystalline. Since the electrical properties of graphene are degraded at grain boundaries, the performance of CVD graphene is significantly dependent
upon its grain size. Thus, the evaluation of average grain size is of particular importance for the device applications of CVD graphene. However, conventional evaluation methods based on microscopic or spectroscopic
measurements have limitations in accuracy due to limited inspection area and complicated processes. Here, we
suggest an electrical characterization technique for precisely evaluating the average grain size of polycrystalline
graphene. We found out that the sheet resistance of polycrystalline graphene is significantly dependent on device
dimensions and this dependence is related to average grain size. For the evaluation of the average grain size, we
synthesized CVD graphene layers with different growth conditions, fabricated transmission line model (TLM)
patterns on the graphene layers, and measured the sheet resistance (RS) as a function of channel length (Lch). The
average grain sizes of the CVD-graphene layers were extracted from a logistic function fitted to the measured
RS–Lch curves. The results show that the average grain sizes of CVD graphene evaluated by the proposed electrical
method are consistent with those evaluated from a large amount of microscopy images.
Keywords: CVD graphene | Polycrystalline | Average grain size | Electrical characterization | TLM measurement
قیمت: رایگان
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