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دسته بندی:
برق الکترونیک - Power Electronics
سال انتشار:
2021
عنوان انگلیسی مقاله:
Comprehensive review on electrical noise analysis of TFET structures
ترجمه فارسی عنوان مقاله:
بررسی جامع تحلیل نویز الکتریکی سازه های TFET
منبع:
ScienceDirect- Elsevier- Superlattices and Microstructures, Corrected proof, 107101: doi:10:1016/j:spmi:2021:107101
نویسنده:
Sweta Chander
چکیده انگلیسی:
Tunnel Filed Effect Transistors (TFETs) have appeared as an alternative for conventional CMOS
due to their advantages like very low leakage current and steep sub-threshold slope. In semiconductor devices, noise is considered an undesired signal that can deteriorate the desired signal.
In TFET structures different noise sources affect the performance at different frequency ranges.
This paper presents a comprehensive review of impact of electrical noise on the performance of
various TFET structures. The impact of both low-frequency noise sources and high-frequency
sources have been discussed thoroughly. The study of different types of electrical noises occur
in simple TFET device and different structures of TFET is presented.
Keywords: Tunneling | Flicker noise | Shot noise | Thermal noise | Random telegraph noise
قیمت: رایگان
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