دسته بندی:
محاسبات کوانتومی - Quantum-Computing
سال انتشار:
2022
عنوان انگلیسی مقاله:
Random Telegraph Noise of a 28-nm Cryogenic MOSFET in the Coulomb Blockade Regime
ترجمه فارسی عنوان مقاله:
نویز تصادفی تلگراف یک ماسفت برودتی 28 نانومتری در رژیم بلوک کولن
منبع:
ieee - ieee Electron Device Letters;2022;43;1;10:1109/LED:2021:3132964
نویسنده:
HeeBong Yang; Marcel Robitaille; Xuesong Chen; Hazem Elgabra; Lan Wei; Na Young Kim
چکیده انگلیسی:
We observe rich phenomena of two-level random telegraph noise (RTN) from a commercial bulk 28-nm
p-MOSFET (PMOS) near threshold at 14 K, where a Coulomb
blockade (CB) hump arises from a quantum dot (QD) formed
in the channel. Minimum RTN is observed at the CB hump
where the high-current RTN level dramatically switches to
the low-current level. The gate-voltage dependence of the
RTN amplitude and power spectral density match well with
the transconductance from the DC transfer curve in the CB
hump region. Our work unequivocally captures these QD
transport signatures in both current and noise, revealing
quantum confinement effects in commercial short-channel
PMOS even at 14 K, over 100 times higher than the typical dilution refrigerator temperatures of QD experiments
(<100 mK). We envision that our reported RTN characteristics rooted from the QD and a defect trap would be
more prominent for smaller technology nodes, where the
quantum effect should be carefully examined in cryogenic
CMOS circuit designs.
Index Terms: 28-nm CMOS | cryogenic CMOS | random telegraph noise | quantum dot | Coulomb blockade.
قیمت: رایگان
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