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Electrical characterization of flexible hafnium oxide capacitors on deformable softening polymer substrate
خصوصیات الکتریکی خازن های اکسید هافنیوم انعطاف پذیر بر روی بستر پلیمری نرم کننده تغییر شکل پذیر-2021 In this work, we investigate the electrical performance and compatibility of low-temperature hafnium oxide
(HfO2) thin-film capacitors on a novel softening polymer substrate. Metal-insulator-metal HfO2 capacitors were
fabricated using HfO2 as the dielectric material, deposited at 100 ◦C by atomic layer deposition (ALD), and gold
as the top and bottom contacts. The HfO2 capacitors were fabricated on silicon and on softening polymer substrates with a dielectric thickness of 50, 40, 30, and 20 nm. The electrical performance of the MIM capacitors was
measured and compared to determine the quality and compatibility of the low-temperature HfO2 deposition with
the silicon and polymer substrate. The dielectric constant varied from 12 to 17 as the HfO2 thickness increased
from 20 to 50 nm. Moreover, the capacitance density and dielectric constant of the capacitors on the polymer
substrate differed by 3.9% ± 2% and 3.4% ± 2% with respect to the silicon substrate. The polymer substrate
devices also have a higher leakage current, which suggests a higher number of defects in the dielectric film
relative to Si substrates. Finally, the devices on the polymer substrate were subjected to bending cycles (up to
105 cycles) with a 5 mm bending radius to evaluate the resilience of the HfO2 capacitors against mechanical
stress. The results show that the fabrication of the HfO2 thin-film capacitors on the softening polymer substrate is
achievable with high stability and mechanical resilience. Overall, this research could assist the production of
flexible biomedical devices on softening polymer substrates.
Keywords: Hafnium oxide | Thin-film capacitors | Flexible electronics | Softening polymers |
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