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Elucidating the influence of native defects on electrical and optical properties in semiconducting oxides: An experimental and theoretical investigation
تبیین تأثیر عیوب بومی بر خواص الکتریکی و نوری در اکسیدهای نیمه رسانا: یک بررسی تجربی و نظری-2021 Defect engineering using self-doping or creating vacancies in polycrystalline oxide based materials has profound
influence on optical absorption, UV photo detection, and electrical switching. However, defects induced semiconducting oxide devices show enhancement in photo detection and photosensitivity, and hence still remain
interesting in the field of optoelectronics. In this study, defect engineering in semiconducting oxide materials is
discussed along with their roles in optoelectronic device-based applications. Theoretical investigations have been
done for identifying defect states by performing first-principles electronic structure calculations, employing the
density-functional theory. Particularly, in this work we have focused on probing the defect-induced changes in
optical and electrical processes by means of experimental as well as computational investigations. Hence, systematic experimental measurements of optical absorption, electrical switching, charge density, and photocurrent
in defect-rich semiconducting oxide samples have been performed. Our results suggest that defects can lead to
enhancement of optoelectronic properties such as photocurrent, switching speed, optical absorption etc. for
semiconducting oxide based devices.
Keywords: Semiconducting oxides | Photocurrent | Defects | Optical absorption | Charge analysis |
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